CHEMICAL-BOUNDARY LAYERS IN (MO)CVD

被引：9

作者：

DECROON, MHJM

GILING, LJ

机构：

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1989年 / 19卷 / 1-2期

关键词：

D O I：

10.1016/0146-3535(89)90018-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：125 / 136

页数：12

共 22 条

[1]

BLOEM J, 1978, CURRENT TOPICS MATER, V1, P147

[2] A MATHEMATICAL-MODEL OF THE COUPLED FLUID-MECHANICS AND CHEMICAL-KINETICS IN A CHEMICAL VAPOR-DEPOSITION REACTOR [J].

COLTRIN, ME ;

KEE, RJ ;

MILLER, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) :425-434

[3] A MATHEMATICAL-MODEL OF SILICON CHEMICAL VAPOR-DEPOSITION - FURTHER REFINEMENTS AND THE EFFECTS OF THERMAL-DIFFUSION [J].

COLTRIN, ME ;

KEE, RJ ;

MILLER, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1206-1213

[4]

DECROON MHJ, IN PRESS

[5]

DECROON MHJ, UNPUB J ELECTROCHEM

[6] GAS-FLOW PATTERNS IN HORIZONTAL EXPITAXIAL REACTOR CELLS OBSERVED BY INTERFERENCE HOLOGRAPHY [J].

GILING, LJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) :634-644

[7]

HAGEMAN PR, UNPUB J CRYST GROWTH

[8] THERMAL-DIFFUSION IN METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HOLSTEIN, WL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (07) :1788-1793

[9] THERMAL-DIFFUSION EFFECTS IN CHEMICAL VAPOR-DEPOSITION REACTORS [J].

JENKINSON, JP ;

POLLARD, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2911-2917

[10] SILICON DOPING OF GAAS AND ALXGA1-XAS USING DISILANE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KUECH, TF ;

VEUHOFF, E ;

MEYERSON, BS .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :48-53

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