CORRELATION BETWEEN DEFECT DENSITY AND FERMI-LEVEL POSITION IN A-SI-H

被引：27

作者：

PIERZ, K

FUHS, W

MELL, H

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(89)90679-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：651 / 653

页数：3

共 8 条

[1] STRUCTURE AND ELECTRONIC STATES IN DISORDERED-SYSTEMS [J].

BARYAM, Y ;

ADLER, D ;

JOANNOPOULOS, JD .

[2]

PIERZ K, 1987, J NONCRYST SOLIDS, V97, P91

[3]

PIERZ K, IN PRESS

SMITH, ZE ;

WAGNER, S .

[5]

SMITH ZE, 1989, ADV DISORDERED SEM A, V1, P409

[6] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON [J].

STREET, RA .

[7] MECHANISMS OF THERMAL EQUILIBRATION IN DOPED AMORPHOUS-SILICON [J].

STREET, RA ;

HACK, M ;

JACKSON, WB .

PHYSICAL REVIEW B, 1988, 37 (08) :4209-4224

[8]

STUTZMANN M, IN PRESS PHIL MAG B, V60