EVIDENCE FOR AMPHOTERIC BEHAVIOR OF RU ON CDTE SURFACES

被引：14

作者：

BOSE, DN

BASU, S

MANDAL, KC

MAZUMDAR, D

机构：

[1] Indian Inst of Technology, Kharagpur, India, Indian Inst of Technology, Kharagpur, India

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 07期

关键词：

D O I：

10.1063/1.96534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTOR MATERIALS

引用

页码：472 / 474

页数：3

共 9 条

[1] RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES [J].

ASPNES, DE .

SURFACE SCIENCE, 1983, 132 (1-3) :406-421

[2] EFFECT OF SURFACE MODIFICATION ON SUBBANDGAP RESPONSE OF N-INP PHOTOELECTRODES [J].

BOSE, DN ;

RAMPRAKASH, Y ;

BASU, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) :850-852

[3]

BOSE DN, 1985, 18TH P IEEE PHOT SPE

[4] OPTICAL PROPERTIES OF AMORPHOUS ZNTE AND CDTE [J].

BROWN, HM ;

BRODIE, DE .

CANADIAN JOURNAL OF PHYSICS, 1972, 50 (20) :2502-+

[5] OPTICAL TO ELECTRICAL ENERGY-CONVERSION - CADMIUM TELLURIDE-BASED PHOTOELECTROCHEMICAL CELLS EMPLOYING TELLURIDE-DITELLURIDE ELECTROLYTES [J].

ELLIS, AB ;

KAISER, SW ;

WRIGHTON, MS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1976, 98 (20) :6418-6420

[6] APPLICATION OF SCANNING ELECTRON-MICROSCOPY TO DETERMINATION OF SURFACE RECOMBINATION VELOCITY - GAAS [J].

JASTRZEBSKI, L ;

LAGOWSKI, J ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1975, 27 (10) :537-539

[7] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].

KINGSTON, RH ;

NEUSTADTER, SF .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :718-720

[8]

MANDAL KC, SOLAR CELLS

[9] EFFECTS OF CATIONS ON THE PERFORMANCE OF THE PHOTOANODE IN THE N-GAAS-K2SE-K2SE2-KOH-C SEMICONDUCTOR LIQUID JUNCTION SOLAR-CELL [J].

PARKINSON, BA ;

HELLER, A ;

MILLER, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :954-960

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