OXIDATION RESISTANT SOL-GEL DERIVED SILICON OXYNITRIDE THIN-FILMS

被引：3

作者：

BROW, RK ^{[1
]}

PANTANO, CG ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT MAT SCI & ENGN,UNIVERSITY PK,PA 16802

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 01期

关键词：

FILMS - Oxidation - MASS SPECTROMETERS - NITROGEN - SILICA;

D O I：

10.1063/1.96750

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon oxynitride films, made by reacting porous, sol-gel derived silicon dioxide with ammonia, were oxidized in dry O//2 between 800 and 1000 degree C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.

引用

页码：27 / 29

页数：3

共 8 条

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