THE GROWTH AND DOPING OF GAASYSB1-Y BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

KERR, TM

MCLEAN, TD

WESTWOOD, DI

GRANGE, JD

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583170

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：535 / 535

页数：1

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[J]. APPLIED PHYSICS LETTERS, 1977, 30 (08) : 397 - 399
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