ON MILLER APPROXIMATION IN SILICON PLANE JUNCTIONS

被引:4
作者
MANDUTEANU, GV
机构
关键词
D O I
10.1109/T-ED.1985.22300
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:2492 / 2494
页数:3
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共 16 条
[1]  
[Anonymous], MICROELECTRONICS PRO
[2]  
Blicher A., 1981, FIELD EFFECT BIPOLAR
[3]   BREAKDOWN VOLTAGE OF DOUBLE-SIDED P-N-JUNCTIONS [J].
BROOK, P .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) :730-731
[4]  
BULUCEA CD, 1973, IEEE T ELECTRON DEV, VED20, P692, DOI 10.1109/T-ED.1973.17730
[5]  
Grebene A. B., 1972, ANALOG INTEGRATED CI
[6]   IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].
LEE, CA ;
KLEIMACK, JJ ;
BATDORF, RL ;
WIEGMANN, W ;
LOGAN, RA .
PHYSICAL REVIEW, 1964, 134 (3A) :A761-+
[7]  
MANDUTEANU GV, 1984, INT J ELECTRON, V56, P555, DOI 10.1080/00207218408938848
[8]  
Milnes A. G., 2012, SEMICONDUCTOR DEVICE
[10]  
MULLER RS, 1977, DEVICES ELECTRONICS