GROWN-IN DEFECTS IN MULTI-EPILAYER GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION UNDER DIFFERENT GROWTH-CONDITIONS

被引：6

作者：

LI, SS ^{[1
]}

LEE, DH ^{[1
]}

CHOI, CG ^{[1
]}

ANDREWS, JE ^{[1
]}

机构：

[1] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.96319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1180 / 1182

页数：3

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