INFRARED SPECTROPHOTOMETRY OF CARBON-INDUCED LOCALIZED VIBRATIONAL-MODE IN INDIUM-DOPED LIQUID-ENCAPSULATED CZOCHRALSKI GAAS

被引：6

作者：

KITAGAWARA, Y

ITOH, T

NOTO, N

TAKENAKA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 12期

关键词：

D O I：

10.1063/1.96670

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：788 / 790

页数：3

共 11 条

[1] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE [J].

BROZEL, MR ;

CLEGG, JB ;

NEWMAN, RC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) :1331-1339

[2] CORRELATION OF THRESHOLD VOLTAGE OF IMPLANTED FIELD-EFFECT TRANSISTORS AND CARBON IN GAAS SUBSTRATES [J].

CHEN, RT ;

HOLMES, DE ;

ASBECK, PM .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :459-461

[3]

Holmes D., 1982, Electron Devices, IEEE Transactions on, V29, P1045

[4] QUANTITATIVE-ANALYSIS OF CARBON IN LIQUID-ENCAPSULATED CZOCHRALSKI GAAS [J].

HOMMA, Y ;

ISHII, Y ;

KOBAYASHI, T ;

OSAKA, J .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2931-2935

[5] CARBON IN SEMI-INSULATING, LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HUNTER, AT ;

KIMURA, H ;

BAUKUS, JP ;

WINSTON, HV ;

MARSH, OJ .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :74-76

[6] ELECTRICAL UNIFORMITY FOR SI-IMPLANTED LAYER OF COMPLETELY DISLOCATION-FREE AND STRIATION-FREE GAAS [J].

HYUGA, F ;

KOHDA, H ;

NAKANISHI, H ;

KOBAYASHI, T ;

HOSHIKAWA, K .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :620-622

[7]

ITOH T, UNPUB

[8] QUANTITATIVE-ANALYSIS OF IN DENSITY IN SEMI-INSULATING GAAS BY PHOTOLUMINESCENCE [J].

KITAHARA, K ;

KODAMA, K ;

OZEKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (11) :1503-1505

[9] BORON AND CARBON IMPURITIES IN GALLIUM-ARSENIDE [J].

NEWMAN, RC ;

THOMPSON, F ;

HYLIANDS, M ;

PEART, RF .

SOLID STATE COMMUNICATIONS, 1972, 10 (06) :505-&

[10] EFFECTS OF STOICHIOMETRY ON THERMAL-STABILITY OF UNDOPED, SEMI-INSULATING GAAS [J].

TA, LB ;

HOBGOOD, HM ;

ROHATGI, A ;

THOMAS, RN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5771-5775

← 1 2 →