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ELECTRICAL UNIFORMITY FOR SI-IMPLANTED LAYER OF COMPLETELY DISLOCATION-FREE AND STRIATION-FREE GAAS

被引：20
作者：
HYUGA, F
KOHDA, H
NAKANISHI, H
KOBAYASHI, T
HOSHIKAWA, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期
关键词：
D O I：
10.1063/1.96092
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：620 / 622
页数：3
相关论文
共 6 条
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[3]  
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[5]   SPATIALLY RESOLVED ELECTRICAL AND SPECTROSCOPIC STUDIES AROUND DISLOCATIONS IN GAAS SINGLE-CRYSTALS [J].
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[6]   SUBSTRATE EFFECTS ON THE THRESHOLD VOLTAGE OF GAAS FIELD-EFFECT TRANSISTORS [J].
WINSTON, HV ;
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OLSEN, HM ;
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LEE, RE .
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