TEMPERATURE-DEPENDENCE OF THE PICOSECOND CARRIER RELAXATION IN SILICON-IRRADIATED SILICON-ON-SAPPHIRE FILMS

被引：8

作者：

PFEIFFER, T

KUHL, J

GOBEL, EO

PALMETSHOFER, L

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

[2] UNIV MARBURG,FACHBEREICH PHYS,D-3550 MARBURG,FED REP GER

[3] JOHANNES KEPLER UNIV,INST EXPTL PHYS,A-4040 LINZ,AUSTRIA

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.339568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1850 / 1855

页数：6

相关论文

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