DIFFUSION OF BORON INTO SILICON

[1] BLASER JP, 1951, HELV PHYS ACTA, V24, P465

[2] BLASER JP, 1952, HELV PHYS ACTA, V25, P442

[3] NACHWEIS VON BOR AUF SILIZIUM - OBERFLACHEN MIT AKTIVIERUNGSANALYSE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (MAY) : 513 - &

[4] FULLER CS, 1956, J APPL PHYS, V27, P1430

[5] TOTAL NEUTRON YIELDS FROM LIGHT ELEMENTS UNDER PROTON AND ALPHA-BOMBARDMENT [J]. PHYSICAL REVIEW, 1959, 114 (02): : 571 - 580

[6] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[7] DIFFUSION OF BORON INTO SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 303 - 305

[8] DIFFUSION OF PHOSPHORUS INTO SILICON [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (10) : 1592 - &

[9] MAEKAWA S, 1961, OCT PHYS SOC JAP FAL

[10] MILLER DP, 1962, J APPL PHYS, V33, P2646

[1] BLASER JP, 1951, HELV PHYS ACTA, V24, P465

[2] BLASER JP, 1952, HELV PHYS ACTA, V25, P442

[3] NACHWEIS VON BOR AUF SILIZIUM - OBERFLACHEN MIT AKTIVIERUNGSANALYSE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (MAY) : 513 - &

[4] FULLER CS, 1956, J APPL PHYS, V27, P1430

[5] TOTAL NEUTRON YIELDS FROM LIGHT ELEMENTS UNDER PROTON AND ALPHA-BOMBARDMENT [J]. PHYSICAL REVIEW, 1959, 114 (02): : 571 - 580

[6] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[7] DIFFUSION OF BORON INTO SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 303 - 305

[8] DIFFUSION OF PHOSPHORUS INTO SILICON [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (10) : 1592 - &

[9] MAEKAWA S, 1961, OCT PHYS SOC JAP FAL

[10] MILLER DP, 1962, J APPL PHYS, V33, P2646