PROPERTIES OF SOLITARY CURRENT FILAMENTS IN SILICON PIN DIODES

被引：22

作者：

BAUMANN, H

SYMANCZYK, R

RADEHAUS, C

PURWINS, HG

JAGER, D

机构：

来源：

PHYSICS LETTERS A | 1987年 / 123卷 / 08期

关键词：

D O I：

10.1016/0375-9601(87)90046-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：421 / 424

页数：4

共 10 条

[1]

BAUMANN H, 1986, SCANNING ELECTRON MI, V2, P441

[2]

BERKEMEIER J, 1986, Z PHYS B, V65, P225

[3] EXPERIMENTAL-OBSERVATION OF SPATIAL STRUCTURES DUE TO CURRENT FILAMENT FORMATION IN SILICON PIN DIODES [J].

JAGER, D ;

BAUMANN, H ;

SYMANCZYK, R .

PHYSICS LETTERS A, 1986, 117 (03) :141-144

[4]

KARDELL K, IN PRESS

[5]

KOSCHMIEDER EL, 1977, SYNERGETICS WORKSHOP, P70

[6] INTERPRETATION OF POTENTIAL-PROBE MEASUREMENTS IN 2-CARRIER STRUCTURES [J].

MAYER, JW ;

MARSH, OJ ;

BARON, R ;

KIKUCHI, R ;

RICHARDSON, JM .

PHYSICAL REVIEW, 1965, 137 (1A) :A295-+

[7]

PURWINS HG, IN PRESS

[8] PATTERN-FORMATION IN S-SHAPED NEGATIVE DIFFERENTIAL CONDUCTIVITY MATERIAL [J].

RADEHAUS, C ;

KARDELL, K ;

BAUMANN, H ;

JAGER, D ;

PURWINS, HG .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1987, 65 (04) :515-525

[9] EQUAL AREAS RULES FOR FILAMENTATION IN SNDC ELEMENTS [J].

SCHOLL, E .

SOLID-STATE ELECTRONICS, 1986, 29 (07) :687-695

[10] DOUBLED INJECTION IN SEMICONDUCTORS HEAVILY DOPED WITH DEEP 2-LEVEL TRAPS [J].

WEBER, WH ;

FORD, GW .

SOLID-STATE ELECTRONICS, 1970, 13 (10) :1333-&

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