INTERPRETATION OF POTENTIAL-PROBE MEASUREMENTS IN 2-CARRIER STRUCTURES

被引:14
作者
MAYER, JW
MARSH, OJ
BARON, R
KIKUCHI, R
RICHARDSON, JM
机构
来源
PHYSICAL REVIEW | 1965年 / 137卷 / 1A期
关键词
D O I
10.1103/PhysRev.137.A295
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:A295 / +
页数:1
相关论文
共 10 条
[1]   DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J].
LUDWIG, GW ;
WATTERS, RL .
PHYSICAL REVIEW, 1956, 101 (06) :1699-1701
[2]   ACCURATE SOLUTION OF AN IDEALIZED ONE-CARRIER METAL-SEMICONDUCTOR JUNCTION PROBLEM [J].
MACDONALD, JR .
SOLID-STATE ELECTRONICS, 1962, 5 (JAN-F) :11-37
[3]   STATIC SPACE CHARGE AND CAPACITANCE FOR 2-BLOCKING ELECTRODES [J].
MACDONALD, JR .
JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (03) :806-816
[4]   STATIC SPACE CHARGE AND CAPACITANCE FOR A SINGLE BLOCKING ELECTRODE [J].
MACDONALD, JR .
JOURNAL OF CHEMICAL PHYSICS, 1958, 29 (06) :1346-1358
[6]   OBSERVATION OF DOUBLE INJECTION IN LONG SILICON P-I-N STRUCTURES [J].
MAYER, JW ;
BARON, R ;
MARSH, OJ .
PHYSICAL REVIEW, 1965, 137 (1A) :A286-&
[7]   PROBING THE SPACE-CHARGE LAYER IN A P-N JUNCTION [J].
PEARSON, GL ;
READ, WT ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1952, 85 (06) :1055-1057
[8]   ION DRIFT IN AN N-P JUNCTION [J].
PELL, EM .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) :291-302
[10]  
SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P308