BOUND EXCITON NEUTRAL ACCEPTOR COMPLEX IN ZNTE

被引:8
作者
WARDZYNSKI, W
PATAJ, K
机构
[1] POLISH ACAD SCI,INST PHYS,WARSAW 42,POLAND
[2] INST ELECTR TECHNOL,WARSAW,POLAND
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1976年 / 75卷 / 01期
关键词
D O I
10.1002/pssb.2220750137
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:341 / 346
页数:6
相关论文
共 17 条
[1]  
ATEN AC, 1962, P INT C PHYS SEMICON, P696
[2]   CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE [J].
AVEN, M ;
SEGALL, B .
PHYSICAL REVIEW, 1963, 130 (01) :81-+
[3]   EFFECTS OF UNIAXIAL STRAIN ON BAND-EDGE OPTICAL TRANSITIONS IN A DIRECT ZINC-BLENDE-STRUCTURE SEMICONDUCTOR [J].
BAILEY, PT .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :588-&
[4]  
BRYANT FJ, 1973, IZV AKAD NAUK SSSR, V37, P426
[5]  
GROSS EF, 1963, FIZ TVERD TELA, V5, P801
[6]  
HALSTED RE, 1967, PHYSICS CHEMISTRY 2, P402
[7]  
HALSTED RE, 1961, B AM PHYS SOC, V6, P312
[8]   EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].
HAYNES, JR .
PHYSICAL REVIEW LETTERS, 1960, 4 (07) :361-363
[9]  
IIDA S, 1972, J PHYS SOC JAPAN, V32, P149
[10]  
KAPLYANSKI AA, 1963, FIZ TVERD TELA, V7, P2327