SINGLE-CRYSTAL BETA-SIC FILMS BY REACTIVE SPUTTERING

[1] Bartlett R. W., 1969, MATER RES B, V4, pS341

[2] BERMAN I, 1973, SILICON CARBIDE 1973, P42

[3] BRANDER RW, 1973, SILICON CARBIDE 1973, P8

[4] SURFACE CHARACTERISTICS AND ELECTRICAL CONDUCTION OF BETA-SIC FILMS FORMED BY CHEMICAL CONVERSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1970, 7 (04): : 490 - &

[5] JACKSON DM, 1965, T METALL SOC AIME, V233, P468

[6] EPITAXIAL GROWTH OF SILICON CARBIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 728 - &

[7] Khan I.H., 1969, MATER RES B, V4, pS285

[8] LOW-TEMPERATURE EPITAXY OF BETA-SIC BY REACTIVE DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1970, 17 (01) : 26 - &

[9] SPIELMANN W, 1965, Z ANGEW PHYSIK, V19, P93

[10] WESSELS B, 1973, SILICON CARBIDE, P25

[1] Bartlett R. W., 1969, MATER RES B, V4, pS341

[2] BERMAN I, 1973, SILICON CARBIDE 1973, P42

[3] BRANDER RW, 1973, SILICON CARBIDE 1973, P8

[4] SURFACE CHARACTERISTICS AND ELECTRICAL CONDUCTION OF BETA-SIC FILMS FORMED BY CHEMICAL CONVERSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1970, 7 (04): : 490 - &

[5] JACKSON DM, 1965, T METALL SOC AIME, V233, P468

[6] EPITAXIAL GROWTH OF SILICON CARBIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 728 - &

[7] Khan I.H., 1969, MATER RES B, V4, pS285

[8] LOW-TEMPERATURE EPITAXY OF BETA-SIC BY REACTIVE DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1970, 17 (01) : 26 - &

[9] SPIELMANN W, 1965, Z ANGEW PHYSIK, V19, P93

[10] WESSELS B, 1973, SILICON CARBIDE, P25