PASSIVE Q-SWITCHING OF ND-YAG LASERS BY USE OF BULK SEMICONDUCTORS

被引：29

作者：

TSOU, Y

GARMIRE, E

CHEN, W

BIRNBAUM, M

ASTHANA, R

机构：

[1] Center for Laser Studies, University of Southern California, Los Angeles, CA

来源：

OPTICS LETTERS | 1993年 / 18卷 / 18期

关键词：

D O I：

10.1364/OL.18.001514

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report passive Q switching of Nd:YAG lasers with the use of a bulk InGaAsP film, grown on an InP substrate by liquid-phase epitaxy, as an intracavity saturable absorber. The single Q-switched pulse had a maximum energy of 1.65 mJ with a 20-ns duration. The simple technology is easily extendible to any infrared solid-state laser.

引用

页码：1514 / 1516

页数：3

共 9 条

[1]

Basiev T. T., 1983, Soviet Journal of Quantum Electronics, V13, P370, DOI 10.1070/QE1983v013n03ABEH004166

[2] ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES [J].