TIME-RESOLVED LUMINESCENCE STUDY OF ULTRAFAST CARRIER TRANSPORT IN GAAS METAL-SEMICONDUCTOR-METAL DEVICES

被引：9

作者：

KERSTING, R

PLETTNER, J

LEO, K

AVERIN, S

KURZ, H

机构：

[1] Institut für Halbleitertechnik, RWTH Aachen, W-5100 Aachen

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.108853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Femtosecond time-resolved luminescence spectroscopy is used as a novel tool to study the ultrafast transport in interdigitated metal-semiconductor-metal Schottky diodes. The time-resolved luminescence signals of GaAs-MSM diodes depend strongly on bias voltage and carrier density. In these experiments, field-induced transfer to indirect valleys is directly observed in the time domain for the first time.

引用

页码：732 / 734

页数：3

共 16 条

[1]

BOWERS JE, 1987, IEEE J LIGHTWAVE TEC, V5, P139

[2]

CONSTANT E, 1985, HOT ELECT TRANSPORT, P227

[3] HIGH-SPEED MONOLITHICALLY INTEGRATED GAAS PHOTORECEIVER USING A METAL-SEMICONDUCTOR-METAL PHOTODIODE [J].