EXCITON TRANSPORT AND LOCALIZATION IN TYPE-II GAAS/ALAS SUPERLATTICES

被引：5

作者：

GILLILAND, GD

WOLFORD, DJ

BRADLEY, JA

KLEM, J

JAROS, M

机构：

[1] IBM CORP,DIV RES,T J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[3] UNIV NEWCASTLE UPON TYNE,DEPT PHYS,NEWCASTLE TYNE NE1 7RU,TYNE & WEAR,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.586496

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have measured directly the transport of excitons in a type-II short-period GaAs/AlAs superlattice. We find the transport is laser-power dependent, and, at low powers or long times, is diffusive. At low powers, we find diffusion constants which increase monotonically from 2 X 10(-3) cm2/s at 1.8 K to approximately 7.0 cm2/s at 30 K. Our results confirm the existence of exciton localization and thermally activated hopping. Implications of these results are discussed.

引用

页码：1647 / 1651

页数：5

共 38 条

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