GROWTH OF PBTE/CDTE ON GAAS(100)

被引：20

作者：

YOSHINO, J ^{[1
]}

MUNEKATA, H ^{[1
]}

CHANG, LL ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583804

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：683 / 685

页数：3

共 8 条

[1] CD1-XMNX TE-CDTE MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

YANKA, RW ;

GILESTAYLOR, NC ;

BLANKS, DK ;

BUCKLAND, EL ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :92-94

[2]

FERROW RFC, 1985, MOL BEAM EPITAXY HET, P227

[3]

Holloway H., 1980, Molecular beam epitaxy, P49

[4] MOLECULAR-BEAM EPITAXY OF DILUTED MAGNETIC SEMICONDUCTOR (CD1-XMNXTE) SUPERLATTICES [J].

KOLODZIEJSKI, LA ;

BONSETT, TC ;

GUNSHOR, RL ;

DATTA, S ;

BYLSMA, RB ;

BECKER, WM ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :440-442

[5] LAYER AND SPIRAL GROWTH OF CDTE EPITAXIAL-FILMS [J].

LOPEZOTERO, A ;

HUBER, W .

SURFACE SCIENCE, 1979, 86 (JUL) :167-173

[6] LUMINESCENCE OF EXCITON-NEUTRAL DONOR COMPLEX IN CDTE [J].

SUGA, S ;

DREYBRODT, W ;

WILLMANN, F ;

HIESINGER, P ;

CHO, K .

SOLID STATE COMMUNICATIONS, 1974, 15 (05) :871-874

[7] MOLECULAR-BEAM EPITAXY OF IN-DOPED CDTE [J].

SUGIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (04) :665-666

[8] IONIZED-CLUSTER BEAM EPITAXY OF CDTE AND ITS APPLICATION TO CDTE/PBTE MULTILAYER STRUCTURE [J].

TAKAGI, T ;

TAKAOKA, H ;

KURIYAMA, Y ;

MATSUBARA, K .

THIN SOLID FILMS, 1985, 126 (1-2) :149-154

← 1 →