OPTIMIZATION OF HIGH-SPEED CMOS LOGIC-CIRCUITS WITH ANALYTICAL MODELS FOR SIGNAL DELAY, CHIP AREA, AND DYNAMIC POWER DISSIPATION

被引:34
作者
HOPPE, B
NEUENDORF, G
SCHMITTLANDSIEDEL, D
SPECKS, W
机构
[1] SIEMENS AG,DEPT CORP RES & DEV,MICROELECTR LAB,W-8000 MUNICH 83,GERMANY
[2] RHEIN WESTFAL TH AACHEN,INST THEORET ELECTR,W-4100 AACHEN,GERMANY
关键词
D O I
10.1109/43.46799
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Signal delay, chip area, and power dissipation are conflicting criteria for designing high performance VLSI MOS circuits. This paper describes global optimization of transistor sizes in digital CMOS logic circuits with the design tool multiobjective gate level optimization (MOGLO). Analytical models for the design objectives are presented and novel algorithms are discussed. Different techniques were combined to solve the circuit optimization problem with low computational costs. Precise gate level delay models guarantee meaningful results especially for high-speed logic circuits. © 1990 IEEE
引用
收藏
页码:236 / 247
页数:12
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