RESIDUE-FREE REACTIVE ION ETCHING OF BETA-SIC IN CHF3/O2 WITH H-2 ADDITIVE

被引:58
作者
STECKL, AJ
YIH, PH
机构
[1] Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati
关键词
D O I
10.1063/1.107113
中图分类号
O59 [应用物理学];
学科分类号
摘要
Longer term CHF3/O2 reactive ion etching of beta-SiC thin films on Si required for heterostructure fabrication results in the formation of columnar residues in the etched regions which prevent proper device operation. Using Auger electron spectroscopy, the formation of the residues has been correlated with the sputter deposition of Al particles from the plasma electrode onto the SiC surface and the subsequent micromasking effect. A low-level (approximately 10%) addition of H-2 gas to the CHF3/O2 plasma was found to completely prevent the formation of residues in the etched regions. Possible mechanisms responsible for the prevention of residues include the formation of volatile Al-H compounds and the enhanced etching of the C-rich surface.
引用
收藏
页码:1966 / 1968
页数:3
相关论文
共 11 条
[1]   CRITICAL-EVALUATION OF THE STATUS OF THE AREAS FOR FUTURE-RESEARCH REGARDING THE WIDE BAND-GAP SEMICONDUCTORS DIAMOND, GALLIUM NITRIDE AND SILICON-CARBIDE [J].
DAVIS, RF ;
SITAR, Z ;
WILLIAMS, BE ;
KONG, HS ;
KIM, HJ ;
PALMOUR, JW ;
EDMOND, JA ;
RYU, J ;
GLASS, JT ;
CARTER, CH .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1988, 1 (01) :77-104
[2]   DRY ETCHING OF BETA-SIC IN CF4 AND CF4+O-2 MIXTURES [J].
PALMOUR, JW ;
DAVIS, RF ;
WALLETT, TM ;
BHASIN, KB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1986, 4 (03) :590-593
[3]  
PALMOUR JW, 1987, MATER RES SOC S P, V76, P185
[4]  
PAN WS, 1989, SPRINGER P PHYSICS, V34, P192
[5]  
PAN WS, 1990, J ELECTROCHEM SOC, V137, P213
[6]  
PEARSE RWB, 1976, IDENTIFICATION MOL S, P39
[7]   GROWTH AND CHARACTERIZATION OF CUBIC SIC SINGLE-CRYSTAL FILMS ON SI [J].
POWELL, JA ;
MATUS, LG ;
KUCZMARSKI, MA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (06) :1558-1565
[8]  
POWELL JA, 1989, SPRINGER P PHYSICS, V34, P2
[9]   REACTIVE ION ETCHING OF DIAMOND [J].
SANDHU, GS ;
CHU, WK .
APPLIED PHYSICS LETTERS, 1989, 55 (05) :437-438
[10]   SI HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SINGLE-CRYSTALLINE BETA-SIC EMITTERS [J].
SUGII, T ;
ITO, T ;
FURUMURA, Y ;
DOKI, M ;
MIENO, F ;
MAEDA, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (10) :2545-2549