DRY ETCHING OF BETA-SIC IN CF4 AND CF4+O-2 MIXTURES

被引：68

作者：

PALMOUR, JW ^{[1
]}

DAVIS, RF ^{[1
]}

WALLETT, TM ^{[1
]}

BHASIN, KB ^{[1
]}

机构：

[1] NASA, LEWIS RES CTR, CLEVELAND, OH 44135 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573854

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：590 / 593

页数：4

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[8] REACTIVE ION-BEAM ETCHING OF SILICON-CARBIDE [J].

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