EPITAXIAL-GROWTH AND CHARACTERIZATION OF LATTICE-MATCHED GAAS/SCX(YB, ER)1-XAS/GAAS HETEROSTRUCTURES AND [SC0.2YB0.8AS, SC0.3ER0.7AS] SUPERLATTICES

被引：7

作者：

GUIVARCH, A ^{[1
]}

GUENAIS, B ^{[1
]}

BALLINI, Y ^{[1
]}

AUVRAY, P ^{[1
]}

CAULET, J ^{[1
]}

MINIER, M ^{[1
]}

DUPAS, G ^{[1
]}

ROPARS, G ^{[1
]}

REGRENY, A ^{[1
]}

GUERIN, R ^{[1
]}

DEPUTIER, S ^{[1
]}

机构：

[1] LAB CHIM MINERALE B,F-35042 RENNES,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90700-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The experimental determination of the Er-Ga-As phase diagram confirms the thermodynamical stability of the heavy rare-earth monoarsenides on GaAs prepared under an As vapor. The molecular beam epitaxy of ternary phases lattice-matched to GaAs such as Sc0.2Yb0.8As and Sc0.3Er0.7As allows one to suppress the appearance of mosaic spread and a chi(min) value as low as 1.5% was measured on these very high quality layers. The quality of the GaAs overlayers has to be improved, but quite good lattice-matched [Sc0.2Yb0.8As, Sc0.3Er0.7AS] superlattices were grown on GaAs.

引用

页码：638 / 642

页数：5

共 12 条

[1]

AUVRAY P, UNPUB APPL PHYS LETT

[2]

DEPUTIER S, 1992, THESIS U RENNES

[3]

DUREL V, 1991, P EUROMBE 91 TAMPERE, P10

[4]

GUENAIS B, 1992, IN PRESS MICROSC MIC, V4