GROWTH OF MATCHED METALLIC ERP0.6AS0.4 LAYERS ON GAAS IN A MOLECULAR-BEAM EPITAXY SYSTEM

被引：25

作者：

LECORRE, A

CAULET, J

GUIVARCH, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 22期

关键词：

D O I：

10.1063/1.102043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2298 / 2300

页数：3

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