GROWTH OF ALPHA-RH2AS ON GAAS(001) IN A MOLECULAR-BEAM EPITAXY SYSTEM

被引：13

作者：

GUIVARCH, A ^{[1
]}

SECOUE, M ^{[1
]}

GUENAIS, B ^{[1
]}

BALLINI, Y ^{[1
]}

BADOZ, PA ^{[1
]}

ROSENCHER, E ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.341961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：683 / 687

页数：5

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[7] EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V COMPOUND SEMICONDUCTOR INTERFACE - NIGA ON GAAS (001) [J].

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