GROWTH OF RHGA ON GAAS (001) IN A MOLECULAR-BEAM EPITAXY SYSTEM

被引：30

作者：

GUIVARCH, A

SECOUE, M

GUENAIS, B

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 12期

关键词：

D O I：

10.1063/1.99237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：948 / 950

页数：3

相关论文

共 15 条

[1] PHASE-EQUILIBRIA IN METAL-GALLIUM-ARSENIC SYSTEMS - THERMODYNAMIC CONSIDERATIONS FOR METALLIZATION MATERIALS
BEYERS, R
KIM, KB
SINCLAIR, R
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) : 2195 - 2202
[2] GROWTH OF MOLYBDENUM AND TUNGSTEN ON GAAS IN A MOLECULAR-BEAM EPITAXY SYSTEM
BLOCH, J
HEIBLUM, M
KOMEM, Y
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1092 - 1094
[3] GUENAIS B, UNPUB
[4] GUERIN R, UNPUB
[5] EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V COMPOUND SEMICONDUCTOR INTERFACE - NIGA ON GAAS (001)
GUIVARCH, A
GUERIN, R
SECOUE, M
[J]. ELECTRONICS LETTERS, 1987, 23 (19) : 1004 - 1005
[6] AUGA2 ON GASB(001) - AN EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V-COMPOUND SEMICONDUCTOR INTERFACE
LINCE, JR
WILLIAMS, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1217 - 1220
[7] COMPARISON OF CHEMICALLY INERT AND REACTIVE METAL COMPOUND-SEMICONDUCTOR INTERFACES - AUGA2 AND GOLD ON GASB(001)
LINCE, JR
WILLIAMS, RS
[J]. THIN SOLID FILMS, 1986, 137 (02) : 251 - 265
[8] ON THE GROWTH OF SILVER ON GAAS(001) SURFACES
MASSIES, J
LINH, NT
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (01) : 25 - 38
[9] OHMIC CONTACTS TO III-V-COMPOUND SEMICONDUCTORS - A REVIEW OF FABRICATION TECHNIQUES
PIOTROWSKA, A
GUIVARCH, A
PELOUS, G
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (03) : 179 - &
[10] ALPHA-RH2AS, A POSSIBLE CANDIDATE FOR PRODUCING (METALLIC-COMPOUND)/GAAS EPITAXIAL STRUCTURES
SECOUE, M
GUENAIS, B
GUIVARCH, A
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (08): : 845 - 850