ALPHA-RH2AS, A POSSIBLE CANDIDATE FOR PRODUCING (METALLIC-COMPOUND)/GAAS EPITAXIAL STRUCTURES

[1] DAVITAYA A, 1985, J VAC SCI TECHNOL B, V3, P770

[2] FURUKAWA S, 1983, JAPAN J APPL PH S221, V22, P21

[3] SUMMARY ABSTRACT - INSITU GROWN SEMICONDUCTOR METAL-SEMICONDUCTOR STRUCTURES - MOLECULAR-BEAM EPITAXIAL-GROWTH OF TUNGSTEN LAYERS EMBEDDED IN SINGLE-CRYSTAL GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 662 - 663

[4] INTERFACIAL REACTIONS BETWEEN NI FILMS AND GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 991 - 1001

[5] THERMAL AND CHEMICAL-STABILITY OF SCHOTTKY METALLIZATION ON GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1298 - 1300

[6] AUGA2 ON GASB(001) - AN EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V-COMPOUND SEMICONDUCTOR INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1217 - 1220

[7] MASSIES J, 1985, VIDE, V40, P101

[8] TRANSISTOR EFFECT IN MONOLITHIC SI/COSI2/SI EPITAXIAL STRUCTURES [J]. ELECTRONICS LETTERS, 1984, 20 (19) : 762 - 764

[9] SAITOH S, 1981, JPN J APPL PHYS, V20, P1649, DOI 10.1143/JJAP.20.1649

[10] TERNARY PHASES IN THE PD-GAAS SYSTEM - IMPLICATIONS FOR SHALLOW CONTACTS TO GAAS [J]. MATERIALS LETTERS, 1985, 3 (9-10) : 409 - 413

[1] DAVITAYA A, 1985, J VAC SCI TECHNOL B, V3, P770

[2] FURUKAWA S, 1983, JAPAN J APPL PH S221, V22, P21

[3] SUMMARY ABSTRACT - INSITU GROWN SEMICONDUCTOR METAL-SEMICONDUCTOR STRUCTURES - MOLECULAR-BEAM EPITAXIAL-GROWTH OF TUNGSTEN LAYERS EMBEDDED IN SINGLE-CRYSTAL GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 662 - 663

[4] INTERFACIAL REACTIONS BETWEEN NI FILMS AND GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 991 - 1001

[5] THERMAL AND CHEMICAL-STABILITY OF SCHOTTKY METALLIZATION ON GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1298 - 1300

[6] AUGA2 ON GASB(001) - AN EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V-COMPOUND SEMICONDUCTOR INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1217 - 1220

[7] MASSIES J, 1985, VIDE, V40, P101

[8] TRANSISTOR EFFECT IN MONOLITHIC SI/COSI2/SI EPITAXIAL STRUCTURES [J]. ELECTRONICS LETTERS, 1984, 20 (19) : 762 - 764

[9] SAITOH S, 1981, JPN J APPL PHYS, V20, P1649, DOI 10.1143/JJAP.20.1649

[10] TERNARY PHASES IN THE PD-GAAS SYSTEM - IMPLICATIONS FOR SHALLOW CONTACTS TO GAAS [J]. MATERIALS LETTERS, 1985, 3 (9-10) : 409 - 413