ALPHA-RH2AS, A POSSIBLE CANDIDATE FOR PRODUCING (METALLIC-COMPOUND)/GAAS EPITAXIAL STRUCTURES

被引：2

作者：

SECOUE, M

GUENAIS, B

GUIVARCH, A

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1987年 / 22卷 / 08期

关键词：

D O I：

10.1051/rphysap:01987002208084500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：845 / 850

页数：6

相关论文

共 17 条

[11] INITIAL-STAGES OF THE PD-GAAS REACTION - FORMATION AND DECOMPOSITION OF TERNARY PHASES
SANDS, T
KERAMIDAS, VG
GRONSKY, R
WASHBURN, J
[J]. THIN SOLID FILMS, 1986, 136 (01) : 105 - 122
[12] STRUCTURE AND COMPOSITION OF NIXGAAS
SANDS, T
KERAMIDAS, VG
WASHBURN, J
GRONSKY, R
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (06) : 402 - 404
[13] SYNTHESIS, LATTICE-PARAMETERS AND THERMAL-EXPANSION COEFFICIENTS OF RHODIUM ARSENIDE RH2AS AND SOME SUBSTITUTED COMPOUNDS
SECOUE, M
AUVRAY, P
TOUDIC, Y
BALLINI, Y
GUERIN, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 76 (01) : 135 - 141
[14] SECOUE M, 1986, ADV MATERIALS TELECO, P467
[15] SECOUE M, 1986, THESIS U RENNES 1
[16] TIJBURG RP, 1986, I PHYS C SER, V79, P355
[17] YU AA, UNPUB