HYDROGEN PLASMA-ETCHING OF SEMICONDUCTORS AND THEIR OXIDES

[1] HYDROGEN PLASMA-ETCHING OF GAAS OXIDE [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 898 - 900

[2] EXCITATION AND DISSOCIATION OF HYDROGEN BY AN ELECTRON SWARM [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1958, 245 (1242): : 335 - 351

[3] DISSOCIATION AND IONIZATION OF HYDROGEN IN HIGH FREQUENCY DISCHARGES [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (510): : 732 - &

[4] KHASE SP, 1966, P PHYS SOC, V88, P605

[5] PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTOR-MATERIALS AND THEIR OXIDES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01): : 12 - 16

[6] 1981, J VAC SCI TECHNOL, V20, P45

[1] HYDROGEN PLASMA-ETCHING OF GAAS OXIDE [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 898 - 900

[2] EXCITATION AND DISSOCIATION OF HYDROGEN BY AN ELECTRON SWARM [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1958, 245 (1242): : 335 - 351

[3] DISSOCIATION AND IONIZATION OF HYDROGEN IN HIGH FREQUENCY DISCHARGES [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (510): : 732 - &

[4] KHASE SP, 1966, P PHYS SOC, V88, P605

[5] PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTOR-MATERIALS AND THEIR OXIDES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01): : 12 - 16

[6] 1981, J VAC SCI TECHNOL, V20, P45