A NEW HYDRO-FLUORINATED AMORPHOUS-SILICON PRODUCED BY USING INTERMEDIATE SPECIES SIF2

被引：15

作者：

MATSUMURA, H ^{[1
]}

FURUKAWA, S ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT APPL ELECTR,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

关键词：

D O I：

10.1016/0022-3093(83)90277-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：739 / 742

页数：4

共 7 条

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[2] HYDROGEN ELIMINATION DURING THE GLOW-DISCHARGE DEPOSITION OF A-SI-H ALLOYS
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[3] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SI-F-H ALLOYS
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[4] MATSUMURA H, 1983, JPN J APPL PHYS S, V22, P523
[5] NEW AMORPHOUS SILICON-BASED ALLOY FOR ELECTRONIC APPLICATIONS
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MADAN, A
[J]. NATURE, 1978, 276 (5687) : 482 - 484
[6] LOW DEFECT DENSITY AMORPHOUS HYDROGENATED SILICON PREPARED BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITION
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REUTER, W
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 973 - 975
[7] WEIL R, 1981, 9TH P INT C ON LIQ S