FERMI-LEVEL EFFECT ON A-SI-H PHOTOCONDUCTIVITY

被引:3
作者
KAGAWA, T
MATSUMOTO, N
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D O I
10.1016/0022-3093(83)90621-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:465 / 468
页数:4
相关论文
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[2]   THE EFFECTS OF BAND BENDING ON THE PHOTOCONDUCTIVITY IN A-SI-H [J].
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PHYSICA B & C, 1983, 117 (MAR) :883-885
[3]   RECOMBINATION EFFECTS ON TRANSIENT PHOTOCURRENT IN A-SI-H [J].
MATSUMOTO, N ;
KAGAWA, T ;
FURUKAWA, S .
PHYSICA B & C, 1983, 117 (MAR) :929-931
[4]  
Rose A., 1951, RCA REV, V12, P362