GAAS-MESFETS MADE BY ION-IMPLANTATION INTO MOCVD BUFFER LAYERS

被引：9

作者：

FENG, M

EU, VK

ZIELINSKI, T

KANBER, H

HENDERSON, WB

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 01期

关键词：

D O I：

10.1109/EDL.1984.25816

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：18 / 20

页数：3

共 6 条

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[4]

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[6] GROWTH OF HIGH-PURITY GAAS EPILAYERS BY MOCVD AND THEIR APPLICATIONS TO MICROWAVE MESFETS [J].

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JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :255-262

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