STRUCTURAL CHARACTERIZATION OF EPITAXIAL ALPHA-DERIVED FESI2 ON SI(111)

被引：60

作者：

JEDRECY, N

WALDHAUER, A

SAUVAGESIMKIN, M

PINCHAUX, R

ZHENG, Y

机构：

[1] UNIV PARIS 07,MINERAL CRISTALLOG LAB,F-75252 PARIS 05,FRANCE

[2] UNIV PARIS 06,MINERAL CRISTALLOG LAB,F-75252 PARIS 05,FRANCE

[3] CENS,SERV RECH SURFACES & IRRADIAT MAT,DEPT RECH ETAT CONDENSE ATOM,F-91190 GIF SUR YVETTE,FRANCE

[4] UNIV PARIS 06,F-75252 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.49.4725

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The tetragonal symmetry of epitaxial FeSi2 grains on Si(111) has been revealed for thin films (<40 angstrom) issued from two very different processes, which had in common a growth temperature of about 500-degrees-C. The structure has been investigated by out-of-plane x-ray diffraction and transmission electron microscopy. An atomic model is proposed derived from the high-temperature alpha phase.

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页码：4725 / 4730

页数：6

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