DAMAGE ANALYSIS AND ATOM SITE DETERMINATION IN ION-IMPLANTED GAAS USING LOW-ENERGY PROTON CHANNELING AND PIXE

被引：6

作者：

PRONKO, PP

BHATTACHARYA, RS

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 02期

关键词：

D O I：

10.1109/TNS.1983.4332621

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1709 / 1712

页数：4

共 9 条

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[8] X-RAY AND RUTHERFORD BACKSCATTERING YIELDS FROM CHANNELED HELIUM IONS IN GAAS [J].

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[9] THE MATERIAL STATE OF ION-IMPLANTED CR IN GAAS [J].

PRONKO, PP ;

RAI, AK ;

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JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5621-5629

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