SPACE RADIATION EFFECTS IN SILICON DEVICES

被引：12

作者：

ROSENZWE.W

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1965年 / NS12卷 / 05期

关键词：

D O I：

10.1109/TNS.1965.4323897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：18 / &

共 9 条

[1]

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[3]

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[6] ENERGY DEPENDENCE ON PROTON IRRADIATION DAMAGE IN SILICON [J].

ROSENZWEIG, W ;

BROWN, WL ;

SMITS, FM .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2707-&

[7] SOLAR CELL DEGRADATION UNDER 1-MEV ELECTRON BOMBARDMENT [J].

ROSENZWEIG, W ;

GUMMEL, HK ;

SMITS, FM .

BELL SYSTEM TECHNICAL JOURNAL, 1963, 42 (02) :399-+

[8]

ROSENZWEIG W, UNPUBLISHED

[9] SOLAR CELLS AND THEIR MOUNTING [J].

SMITH, KD ;

NIELSEN, RJ ;

GUMMEL, HK ;

CUTTRISS, DB ;

ROSENZWEIG, W ;

BODE, JD .

BELL SYSTEM TECHNICAL JOURNAL, 1963, 42 (04) :1765-+

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