PHOTOINDUCED QUENCHING OF INFRARED-ABSORPTION NONUNIFORMITIES OF LARGE DIAMETER GAAS CRYSTALS

被引：37

作者：

SKOLNICK, MS

REED, LJ

PITT, AD

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 04期

关键词：

D O I：

10.1063/1.94762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：447 / 449

页数：3

共 9 条

[1]

BROWN GB, COMMUNICATION

[2] DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS [J].

BROZEL, MR ;

GRANT, I ;

WARE, RM ;

STIRLAND, DJ .

APPLIED PHYSICS LETTERS, 1983, 42 (07) :610-612

[3] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

LAGOWSKI, J ;

GATOS, HC ;

PARSEY, JM ;

WADA, K ;

KAMINSKA, M ;

WALUKIEWICZ, W .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344

[4] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

[5] AUGER DEEXCITATION OF A METASTABLE STATE IN GAAS [J].

MITONNEAU, A ;

MIRCEA, A .

SOLID STATE COMMUNICATIONS, 1979, 30 (03) :157-162

[6]

SKOLNICK MS, 1984, J ELECTRON MATER JAN

[7]

STIRLAND DJ, 1983, I PHYS C SERIES, V67, P285

[8] PHOTOELECTRIC MEMORY EFFECT IN GAAS [J].

VINCENT, G ;

BOIS, D ;

CHANTRE, A .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3643-3649

[9] IDENTIFICATION OF ASGA ANTISITES IN PLASTICALLY DEFORMED GAAS [J].

WEBER, ER ;

ENNEN, H ;

KAUFMANN, U ;

WINDSCHEIF, J ;

SCHNEIDER, J ;

WOSINSKI, T .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6140-6143

← 1 →