OPTICALLY DETECTED ELECTRON-PARAMAGNETIC RESONANCE OF ARSENIC ANTISITES IN LOW-TEMPERATURE GAAS-LAYERS

被引：26

作者：

SUN, HJ

WATKINS, GD

RONG, FC

FOTIADIS, L

POINDEXTER, EH

机构：

[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

[2] LEHIGH UNIV,DEPT PHYS,BETHLEHEM,PA 18015

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 06期

关键词：

D O I：

10.1063/1.106548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (approximately 200-degrees-C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band directly associated with arsenic antisites in the GaAs layers.

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页码：718 / 720

页数：3

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