PHONON CONFINEMENT IN GAAS BY DEFECT FORMATION STUDIED BY REAL-TIME RAMAN MEASUREMENTS

被引：28

作者：

ISHIOKA, K

NAKAMURA, KG

KITAJIMA, M

机构：

[1] National Research Institute for Metals, Tsukuba, Ibaraki 305

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.52.2539

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have carried out real-time Raman measurements on GaAs crystals under 5-keV He+ irradiation and investigated the lattice disordering. The phonon correlation length has been obtained from the change in the Raman spectral line shape of the longitudinal-optical phonon. The phonon correlation length decreases as the ion fluence increases. It is shown that the phonon correlation length corresponds to the mean distance between the defects in ion-irradiated GaAs.

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页码：2539 / 2542

页数：4

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