COMPUTATION OF STRESS IN BRIDGMAN CRYSTALS

被引：17

作者：

HUANG, CE ^{[1
]}

ELWELL, D ^{[1
]}

FEIGELSON, RS ^{[1
]}

机构：

[1] STANFORD UNIV,CTR MAT RES,STANFORD,CA 94305

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 69卷 / 2-3期

关键词：

D O I：

10.1016/0022-0248(84)90333-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：275 / 280

页数：6

共 12 条

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[4]

BROWN RA, 1983, SEP ICCG STUTTG, V7

[5] FINITE-ELEMENT ANALYSIS OF THE CONTROL OF INTERFACE SHAPE IN BRIDGMAN CRYSTAL-GROWTH [J].

CHIN, LY ;

CARLSON, FM .

JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) :561-567

[6] INFLUENCE OF THERMAL-CONDUCTIVITY ON INTERFACE SHAPE DURING BRIDGMAN GROWTH [J].

HUANG, CE ;

ELWELL, D ;

FEIGELSON, RS .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (03) :441-447

[7]

HUANG CE, 1983, SEP ICCG STUTTG, V7

[8]

INDENBOM VL, 1969, GROWTH CRYST, V8, P249

[9] A COMPARATIVE-STUDY OF THERMAL-STRESS INDUCED DISLOCATION GENERATION IN PULLED GAAS, INP, AND SI CRYSTALS [J].

JORDAN, AS ;

CARUSO, R ;

VONNEIDA, AR ;

NIELSEN, JW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3331-3336

[10]

Oden J. T., 1971, International Journal for Numerical Methods in Engineering, V3, P317, DOI 10.1002/nme.1620030303

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