OBSERVATIONS OF INDIVIDUAL PRECIPITATE PARTICLES ASSOCIATED WITH THE SAME DISLOCATIONS WITHIN A BULK IN-DOPED GAAS SPECIMEN BEFORE AND AFTER FURNACE ANNEALING

被引：7

作者：

KIDD, P

STIRLAND, DJ

BOOKER, GR

机构：

[1] PLESSEY RES CASWEL LTD,ALLEN CLARK RES CTR,TOWCESTER NN12 8EQ,NORTHANTS,ENGLAND

[2] UNIV OXFORD,DEPT MET & SCI MAT,OXFORD OX1 3PH,ENGLAND

来源：

MATERIALS LETTERS | 1990年 / 9卷 / 12期

关键词：

D O I：

10.1016/0167-577X(90)90100-Z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The infrared laser scanning microscope (LSM) has been used in transmission to observe the individual precipitate particles decorating line dislocations in bulk, In-doped, semi-insulating, liquid encapsulated Czochralski (LEC) GaAs. Examination of the same segments of the same dislocations within a 3 mm thick specimen before and after annealing at 1000°C for 6 h enabled changes in the number, sizes and distribution of the associated particles to be directly determined. Many particles increased in size while others decreased. The results are interpreted in terms of a model based on an arsenic-rich zone surrounding the individual dislocations. © 1990.

引用

页码：521 / 525

页数：5

共 9 条

[1]

BROZEL MR, 1986, P C SEMIINSULATING M, P133

[2] ARSENIC PRECIPITATION AT DISLOCATIONS IN GAAS SUBSTRATE MATERIAL [J].