DIRECT OBSERVATION OF AN ENHANCED CONCENTRATION OF THE PRINCIPAL DEEP LEVEL EL2 AT SINGLE DISLOCATIONS

被引：25

作者：

STIRLAND, DJ

BROZEL, MR

GRANT, I

机构：

[1] TRENT POLYTECH,DEPT ELECT & ELECTR ENGN,NOTTINGHAM NG1 4BU,ENGLAND

[2] CAMBRIDGE INSTRUMENTS,CAMBRIDGE CB1 3QH,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 11期

关键词：

D O I：

10.1063/1.95762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1066 / 1068

页数：3

共 16 条

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[3] DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS [J].

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[4]

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[6]

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[7] FSGO POINT-CHARGE MODELS - THEIR ACCURACY AND EXTENSION TO HIGHER GAUSSIANS [J].

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[8]

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[9] PHOTOINDUCED QUENCHING OF INFRARED-ABSORPTION NONUNIFORMITIES OF LARGE DIAMETER GAAS CRYSTALS [J].

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[10]

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