A STUDY OF DISLOCATIONS IN IN-DOPED LEC GAAS CRYSTALS

被引：4

作者：

NAKAJIMA, M ^{[1
]}

FUJII, T ^{[1
]}

ISHIDA, K ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 84卷 / 02期

关键词：

D O I：

10.1016/0022-0248(87)90144-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：295 / 302

页数：8

共 20 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2] LOW DISLOCATION, SEMI-INSULATING IN-DOPED GAAS CRYSTALS [J].

BARRETT, DL ;

MCGUIGAN, S ;

HOBGOOD, HM ;

ELDRIDGE, GW ;

THOMAS, RN .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :179-184

[3]

BROZEL MR, 1986, SEMIINSULATING 3 5 M, P133

[4] IDENTIFICATION OF BURGERS VECTORS ALONG (111) IN IN-DOPED GAAS, BY X-RAY TRANSMISSION TOPOGRAPHY AND IMAGE SIMULATION [J].

BURLEDURBEC, N ;

PICHAUD, B ;

MINARI, F ;

SOYER, A ;

EPELBOIN, Y .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1986, 19 :140-141

[5] MECHANISM FOR DISLOCATION DENSITY REDUCTION IN GAAS CRYSTALS BY INDIUM ADDITION [J].

EHRENREICH, H ;

HIRTH, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :668-670

[6] HELICAL DISLOCATIONS IN HIGHLY TE-DOPED GAAS CRYSTALS [J].

IIZUKA, T ;

KIKUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (02) :175-&

[7] DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING [J].

JACOB, G ;

DUSEAUX, M ;

FARGES, JP ;

VANDENBOOM, MMB ;

ROKSNOER, PJ .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :417-424

[8] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J].

JORDAN, AS ;

CARUSO, R ;

VONNEIDA, AR .

BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04) :593-637

[9] TRANSMISSION ELECTRON-MICROSCOPY STUDY OF MICRODEFECTS IN DISLOCATION-FREE GAAS AND INP CRYSTALS [J].

KAMEJIMA, T ;

MATSUI, J ;

SEKI, Y ;

WATANABE, H .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3312-3321

[10] EFFECTS OF INDIUM LATTICE HARDENING UPON THE GROWTH AND STRUCTURAL-PROPERTIES OF LARGE-DIAMETER, SEMIINSULATING GAAS CRYSTALS [J].

MCGUIGAN, S ;

THOMAS, RN ;

BARRETT, DL ;

HOBGOOD, HM ;

SWANSON, BW .

APPLIED PHYSICS LETTERS, 1986, 48 (20) :1377-1379

← 1 2 →