SURFACE CHEMICAL TREATMENT EFFECTS IN ULTRAHIGH PURITY P-TYPE SI DETECTORS

被引:4
作者
TAKAMI, Y [1 ]
SHIRAISHI, F [1 ]
HOSOE, M [1 ]
机构
[1] RIKKYO UNIV,FAC SCI,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
关键词
D O I
10.1109/TNS.1983.4332292
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:376 / 379
页数:4
相关论文
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