THERMALLY DEVELOPABLE, POSITIVE TONE, OXYGEN RIE BARRIER RESIST FOR BILAYER LITHOGRAPHY

被引：24

作者：

ITO, H

UEDA, M

RENALDO, AF

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 01期

关键词：

D O I：

10.1149/1.2096595

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：245 / 249

页数：5

共 22 条

[1]

BOWDEN MJ, 1984, ACS SYM SER, V266, P39

[2]

Coopmans F., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V631, P34, DOI 10.1117/12.963623

[3]

CRIVELLO JV, 1978, UV CURING SCI TECHNO, P23

[4]

Gozdz A. S., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V631, P2, DOI 10.1117/12.963618

[5] A BREAKTHROUGH TO THE PLASMA DEPOSITED DRY-DEVELOPABLE E-BEAM RESIST [J].

HATTORI, S ;

MORITA, S ;

YAMADA, M ;

TAMANO, J ;

IEDA, M .

POLYMER ENGINEERING AND SCIENCE, 1983, 23 (18) :1043-1046

[6]

HIRAOKA H, 1984, P SOC PHOTO-OPT INST, V469, P127, DOI 10.1117/12.941786

[7]

Hofer D. C., 1984, IBM Technical Disclosure Bulletin, V26

[8] SILICON AROMATIC COMPOUNDS .1. TRIMETHYLSILYPHTHALIC ACIDS AND DYES DERIVED FROM THEM [J].

HOPFF, H ;

GALLEGRA, P .

HELVETICA CHIMICA ACTA, 1968, 51 (02) :253-&

[9] NOVEL POLYMERIC DISSOLUTION INHIBITOR FOR THE DESIGN OF SENSITIVE, DRY ETCH RESISTANT, BASE-DEVELOPABLE RESIST [J].

ITO, H ;

FLORES, E ;

RENALDO, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (09) :2328-2333

[10]

ITO H, 1984, ACS SYM SER, V242, P11

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