APPLICATIONS OF MEV ION MICROBEAMS TO THE ANALYSIS OF SINGLE-CRYSTAL MATERIALS

被引：19

作者：

JAMIESON, DN

BROWN, RA

RYAN, CG

WILLIAMS, JS

机构：

[1] CSIRO,DIV EXPLORAT GEOSCI,HEAVY ION ANALYT FACIL,N RYDE,NSW 2113,AUSTRALIA

[2] AUSTRALIAN NATL UNIV,RES SCH PHYS,DEPT ELECTR MAT ENGN,CANBERRA,ACT 2601,AUSTRALIA

[3] ROYAL MELBOURNE INST TECHNOL,CTR MICROELECTR & MAT TECHNOL,MELBOURNE 3000,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 54卷 / 1-3期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1016/0168-583X(91)95516-G

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper reviews the applications of focused MeV ion beams to the analysis of single-crystal semiconductor and other technological materials. The use of ion channeling to provide images of crystal quality and information about atom location is emphasized. The limitations that ion damage imposes on the accuracy of such analyses are discussed in the light of several recent studies of the damage produced by ion microbeams in a variety of single-crystal materials.

引用

页码：213 / 224

页数：12

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