INTRINSIC SEU REDUCTION FROM USE OF HETEROJUNCTIONS IN GALLIUM-ARSENIDE BIPOLAR CIRCUITS

被引：10

作者：

SALZMAN, JF

MCNULTY, PJ

KNUDSON, AR

机构：

[1] CLARKSON UNIV,POTSDAM,NY 13676

[2] USN,RES LAB,WASHINGTON,DC 20375

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337535

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1676 / 1679

页数：4

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ADAMS JH, 1986, 5901 NAV RES LAB MEM

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FLESNER LD, 1984, IEEE T NUCL SCI, V32, P1502

[4] CHARGE COLLECTION IN GA/AS TEST STRUCTURES [J].

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[5] SUGGESTED SINGLE EVENT UPSET FIGURE OF MERIT [J].

PETERSEN, EL ;

LANGWORTHY, JB ;

DIEHL, SE .

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[6] SINGLE EVENT UPSET MEASUREMENTS OF GAAS E-JFET RAMS [J].

SHAPIRO, P ;

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RITTER, JC ;

ZULEEG, R ;

NOTTHOFF, JK .

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[7]

SHAPIRO P, 1983, 5171 NAV RES LAB MEM

[8]

YUAN HT, COMMUNICATION

[9]

YUAN HT, 1986 ISCC, P74

[10]

ZULEEG R, COMMUNICATION

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