REVERSE-MODE SINGLE-ION BEAM-INDUCED CHARGE (R-MODE SIBIC) IMAGING FOR THE TEST OF TOTAL-DOSE EFFECTS IN N-CH METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET)

被引：6

作者：

KOH, M ^{[1
]}

HARA, K ^{[1
]}

HORITA, K ^{[1
]}

SHIGETA, B ^{[1
]}

MATSUKAWA, T ^{[1
]}

KISHIDA, A ^{[1
]}

TANII, T ^{[1
]}

GOTO, M ^{[1
]}

OHDOMARI, I ^{[1
]}

机构：

[1] WASEDA UNIV,KAGAMI MEM LAB SCI & TECHNOL,SHINJUKU KU,TOKYO 169,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 7A期

关键词：

TOTAL DOSE EFFECTS; MOSFET; SINGLE-ION MICROPROBE; SIBIC IMAGING; R-MODE SIBIC IMAGING;

D O I：

10.1143/JJAP.33.L962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To achieve quantitative analysis of site-dependent total dose effects in metal-oxide-semiconductor field-effect transistors (MOSFETs), a new imaging technique designated as the reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for sample positioning combined with accurate ion counting has been developed using the single-ion microprobe. With only five He single ions per pixel, we have succeeded in obtaining images of n-ch MOSFET and n-type Si regions fabricated on a p-well without any degradation of device characteristics. The R-mode SIBIC imaging has made it possible to count exactly the number of ions incident upon the MOSFET during radiation hardness tests.

引用

页码：L962 / L965

页数：4

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