PROTON AND HEAVY-ION RADIATION-DAMAGE STUDIES IN MOS-TRANSISTORS

被引：28

作者：

STAPOR, WJ

AUGUST, LS

WILSON, DH

OLDHAM, TR

MURRAY, KM

机构：

[1] HARRY DIAMOND LABS,ADELPHI,MD 20783

[2] KM SCI,ARLINGTON,VA 22206

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4399 / 4404

页数：6

共 13 条

[1] DEVELOPMENT OF AN MOS DOSIMETRY UNIT FOR USE IN SPACE [J].

ADAMS, L ;

HOLMESSIEDLE, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) :1607-1612

[2] DESIGN CRITERIA FOR A HIGH-DOSE MOS DOSIMETER FOR USE IN SPACE [J].

AUGUST, LS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (01) :801-803

[3] ESTIMATING AND REDUCING ERRORS IN MOS DOSIMETERS CAUSED BY EXPOSURE TO DIFFERENT RADIATIONS [J].

AUGUST, LS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2000-2003

[4] AN MOS DOSIMETER FOR USE IN SPACE [J].

AUGUST, LS ;

CIRCLE, RR ;

RITTER, JC ;

TOBIN, JS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (01) :508-511

[5]

BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446

[6] THE DAMAGE EQUIVALENCE OF ELECTRONS, PROTONS, AND GAMMA-RAYS IN MOS DEVICES [J].

BRUCKER, GJ ;

STASSINOPOULOS, EG ;

VANGUNTEN, O ;

AUGUST, LS ;

JORDAN, TM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1966-1969

[7] A SIMPLE-MODEL FOR SEPARATING INTERFACE AND OXIDE CHARGE EFFECTS IN MOS DEVICE CHARACTERISTICS [J].

GALLOWAY, KF ;

GAITAN, M ;

RUSSELL, TJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1497-1501

[8] USE OF AN ION MICROBEAM TO STUDY SINGLE EVENT UPSETS IN MICROCIRCUITS [J].

KNUDSON, AR ;

CAMPBELL, AB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4017-4021

[9]

MCGARRITY JM, 1980, IEEE T NUCL SCI, V27

[10] RECOMBINATION ALONG THE TRACKS OF HEAVY CHARGED-PARTICLES IN SIO2-FILMS [J].

OLDHAM, TR .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2695-2702

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