A HIGH-PERFORMANCE INGAAS/INALAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR WITH NONALLOYED N+-INAS CAP LAYER ON INP(N) GROWN BY MOLECULAR-BEAM EPITAXY

被引：18

作者：

PENG, CK ^{[1
]}

WON, T ^{[1
]}

LITTON, CW ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] AVION LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 07期

关键词：

HEAT TREATMENT - Annealing - SEMICONDUCTING ALUMINUM COMPOUNDS - SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTING INDIUM COMPOUNDS - Growth - TRANSISTORS - Performance;

D O I：

10.1109/55.734

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InGaAs/InAlAs double-heterojunction bipolar transistor (DHBT) on InP(n) grown by molecular-beam epitaxy (MBE) that exhibits high DC performance is discussed. An n** plus -InAs emitter cap layer was used for nonalloyed contacts in the structure and specific contact resistances of 1. 8 multiplied by 10** minus **7 and 6. 0 multiplied by 10** minus **6 OMEGA -cm**2 were measured for the nonalloyed emitter and base contacts, respectively. Since no high-temperature annealing is necessary, excellent contact surface morphology on thinner base devices can easily be obtained. In devices with 50 multiplied by 50- mu m**2 emitter area, common-emitter current gains as high as 1500 were achieved at a collector current density of 2. 7 multiplied by 10**3 A/cm**2. The current gain increased up to 2000 for alloyed devices.

引用

页码：331 / 333

页数：3

共 14 条

[1] OHMIC CONTACTS ON P-TYPE GA0.47IN0.53AS/INP [J].