POLYSILICON TRANSISTORS ON GLASS BY PULSED-LASER ANNEALING

被引:9
作者
MORIN, F [1 ]
COISSARD, P [1 ]
MOREL, M [1 ]
LIGEON, E [1 ]
BONTEMPS, A [1 ]
机构
[1] CTR ETUD NUCL GRENOBLE, DEPT RECH FONDAMENTALE, F-38041 GRENOBLE, FRANCE
关键词
D O I
10.1063/1.331094
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3897 / 3899
页数:3
相关论文
共 20 条
[1]   SUBSTRATE AND DOPING EFFECTS UPON LASER-INDUCED EPITAXY OF AMORPHOUS SILICON [J].
BEAN, JC ;
LEAMY, HJ ;
POATE, JM ;
ROZGONYI, GA ;
VANDERZIEL, JP ;
WILLIAMS, JS ;
CELLER, GK .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :881-885
[2]   LASER-INDUCED CRYSTALLIZATION OF SILICON ISLANDS ON AMORPHOUS SUBSTRATES - MULTILAYER STRUCTURES [J].
BIEGELSEN, DK ;
JOHNSON, NM ;
BARTELINK, DJ ;
MOYER, MD .
APPLIED PHYSICS LETTERS, 1981, 38 (03) :150-152
[3]  
BONTEMPS A, 1980, 8TH P INT VAC C CANN, P232
[4]   DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].
CULLIS, AG ;
WEBBER, HC ;
BAILEY, P .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08) :688-689
[5]  
GREENWALD AC, 1979, NOV MAT RES SOC S CA
[6]   OPTICAL-PROPERTIES AND STRUCTURE OF AMORPHOUS SILICON FILMS PREPARED BY CVD [J].
JANAI, M ;
ALLRED, DD ;
BOOTH, DC ;
SERAPHIN, BO .
SOLAR ENERGY MATERIALS, 1979, 1 (1-2) :11-27
[7]   MONOLITHIC INTEGRATED-CIRCUIT FABRICATED IN LASER-ANNEALED POLYSILICON [J].
KAMINS, TI ;
LEE, KF ;
GIBBONS, JF ;
SARASWAT, KC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :290-293
[8]   MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ [J].
KAMINS, TI ;
PIANETTA, PA .
ELECTRON DEVICE LETTERS, 1980, 1 (10) :214-216
[9]   HYDROGENATION OF TRANSISTORS FABRICATED IN POLYCRYSTALLINE-SILICON FILMS [J].
KAMINS, TI ;
MARCOUX .
ELECTRON DEVICE LETTERS, 1980, 1 (08) :159-161
[10]   EPITAXIAL-GROWTH OF DEPOSITED AMORPHOUS LAYER BY LASER ANNEALING [J].
LAU, SS ;
TSENG, WF ;
NICOLET, MA ;
MAYER, JW ;
ECKARDT, RC ;
WAGNER, RJ .
APPLIED PHYSICS LETTERS, 1978, 33 (02) :130-131